Fatigue Parameters of Lead Zirconate Titanate Thin Films
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- A new technique for characterization of thin-film ferroelectric memory devicesJournal of Vacuum Science & Technology A, 1988
- Activation field, fatigue, and waiting-time effects in KNO3 thin-film memoriesJournal of Applied Physics, 1987
- Electrical Properties of Niobium-Doped Ferroelectric Pb(Zr, Sn, Ti)O3 CeramicsJournal of Applied Physics, 1967