X-Ray Analysis of Diffusion-Induced Defects in Gallium Arsenide
- 1 January 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (1), 167-173
- https://doi.org/10.1063/1.1707800
Abstract
X‐ray diffraction microscopy measurements were made on zinc‐diffused surface layers. The diffraction contrast produced through diffusion‐induced defects was investigated. Fault structures were deduced from changes in diffraction contrast that occur in large‐area topographs recorded through different Bragg reflections. Dislocations having 〈110〉 axis have been identified and associated with the Lomer‐Cottrell reaction. X‐ray junction profiles have been obtained and correlated with zinc‐concentration profiles. It is concluded that diffusion‐induced defects in gallium arsenide are generated by a stress‐relief mechanism.Keywords
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