Electrical instability of ultrathin thermal oxides on silicon
- 30 June 1995
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 28 (1-4), 67-70
- https://doi.org/10.1016/0167-9317(95)00017-3
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Surface-potential dependence of interface-state passivation in metal–tunnel-oxide–silicon diodesPhysical Review B, 1994
- Defect generation in 3.5 nm silicon dioxide filmsApplied Physics Letters, 1994
- Post-metallization annealing of metal-tunnel oxide-silicon diodesJournal of Applied Physics, 1993
- Annealing and charging of slow and fast states in metal-tunnel oxide-silicon diodes measured using capacitance-voltage and current-voltage techniquesMicroelectronic Engineering, 1993
- Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on siliconJournal of Applied Physics, 1993
- A High Current Gain Si Metal Insulator Semiconductor Tunnel Emitter TransistorJapanese Journal of Applied Physics, 1993
- Negative charging in ultrathin metal-oxide-silicon tunnel diodesJournal of Applied Physics, 1992
- Time-dependent positive charge generation in very thin silicon oxide dielectricsApplied Physics Letters, 1992
- Current multiplication in metal-insulator-semiconductor (MIS) tunnel diodesSolid-State Electronics, 1974
- Enhanced Tunneling through Dielectric Films due to Ionic DefectsJournal of Applied Physics, 1966