A High Current Gain Si Metal Insulator Semiconductor Tunnel Emitter Transistor
- 1 February 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (2A), L180
- https://doi.org/10.1143/jjap.32.l180
Abstract
A Si metal insulator semiconductor tunnel emitter transistor (Si MIS TET) was fabricated and investigated. The current gain of the Si MIS TET with a 32 Å SiO2emitter barrier was 76 at 300 K and 74 at 100 K. It was confirmed that the inversion base layer indeed functioned as a base of the Si MIS TET.Keywords
This publication has 3 references indexed in Scilit:
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- Temperature dependence of MOS transistor characteristics below saturationIEEE Transactions on Electron Devices, 1966