Principles of the development of a silica dielectric for microelectronics packaging

Abstract

Recognizing that speed, size, reliability, and cost are the principal driving forces for advanced electronic packages, this review article describes the much needed development of a new, phase transformation-free, single-phase silica dielectric with a dielectric constant (k) of about 4, the lowest among the inorganic oxides, and a coefficient of thermal expansion (CTE) of about 3 ppm/°C, similar to that of Si. This dielectric, consisting largely of SiO₂, represents a gain in media speed by about 50% over alumina dielectric, combined with an improvement in reliability of the package by a factor of about 1000. The feature size and system cost can also be drastically reduced by using this dielectric. It is made from a mixture of binary borosilicate glasses that normally exhibit an undesirable characteristic of precipitating cristobalite during sintering that severely weakens the structure. The most important aspect of this article is the design and development of a strategy that prevents the cristobalite growth by incorporating a crystal growth inhibitor in the binary mixture of glasses. Since kinetics, not thermodynamics, are shown to be the key to success of this strategy, the roles of rate-controlling parameters are deliberately emphasized. A working model is delineated to identify compositions that yield a cristobalite-free silica dielectric with values of CTE that match those of Si and GaAs. Critical issues of co-firing between metals and this dielectric are addressed within the context of multilayer packaging fabrication. Finally, a list of measured properties is presented that clearly shows new opportunities for this silica dielectric.