High-pressure study of photoluminescence in indium phosphide at low temperature
- 15 April 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (8), 5896-5898
- https://doi.org/10.1103/physrevb.33.5896
Abstract
Photoluminescence measurements on n-type InP have been carried out under hydrostatic pressure in a diamond anvil cell at 20 K. The photoluminescence peak corresponding to the direct-band-gap transition has been observed up to 12 GPa and has been found to change sublinearly with pressure, similar to room-temperature measurements. The effect of shear strains on the photoluminescence signal is also discussed. The intensity of the luminescence signal was obtained as a function of pressure.Keywords
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