Pressure dependence of shallow bound states in gallium arsenide
- 31 March 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 53 (12), 1069-1076
- https://doi.org/10.1016/0038-1098(85)90882-8
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Photoluminescence Investigation of Donor-Level Deepening in GaAs under Hydrostatic PressureJapanese Journal of Applied Physics, 1983
- Diamond anvil cell and high-pressure physical investigationsReviews of Modern Physics, 1983
- Photoluminescence in heavily doped GaAs. II. Hydrostatic pressure dependencePhysical Review B, 1980
- High pressure photoluminescence and resonant Raman study of GaAsSolid State Communications, 1978
- Exciton energy spectrum in GaAs in a magnetic fieldJournal of Luminescence, 1976
- Free-exciton energy spectrum in GaAsPhysical Review B, 1976
- Dependence of the direct energy gap of GaAs on hydrostatic pressurePhysical Review B, 1975
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- Luminescence and Excitation Spectra of Exciton Emission in GaAsPhysica Status Solidi (b), 1974
- Pressure Dependence of the Band Structure of GaAsPhysica Status Solidi (b), 1973