Formation of p-type GaAs layers using Mg+ implantation and capless rapid thermal annealing

Abstract

The enhanced overpressure proximity technique has been applied to the formation of p‐GaAs layers using capless rapid thermal annealing of GaAs implanted with Mg⁺. Carrier concentrations in excess of 1×10¹⁹ cm⁻³ and excellent hole mobilities have been achieved without a dielectric encapsulant using this annealing method. Implants were performed at 200 or 320 keV with doses of 1×10¹⁴ cm⁻² or 1×10¹⁵ cm⁻². Hall measurements have yielded electrical activations as high as 86% and 38% for the low and high dose samples, respectively. Capacitance‐voltage measurements on implanted samples indicate that this annealing technique can be used to control the doping profile for use in the fabrication of devices requiring p‐n junctions.