High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics
Top Cited Papers
- 21 July 2008
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 93 (3)
- https://doi.org/10.1063/1.2956393
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
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