Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces
- 1 May 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 175-176, 422-427
- https://doi.org/10.1016/s0022-0248(96)01202-x
Abstract
No abstract availableKeywords
Funding Information
- Deutsche Forschungsgemeinschaft
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