GaInAs/GaAs strained-layer superlattices grown by low pressure metalorganic vapor phase epitaxy
- 26 May 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (21), 1452-1454
- https://doi.org/10.1063/1.96887
Abstract
Strained‐layer superlattices (SLS’s) of GaxIn1−xAs/GaAs (x≂0.8–0.9) have been grown by low pressure metalorganic vapor phase epitaxy. The reactants were trimethylgallium, trimethylindium, and arsine. The structures were characterized by Auger profiling and low‐temperature photoluminescence. These measurements show that high quality SLS’s with interface widths no larger than 25 Å and very narrow luminescence peaks (6.5 meV) similar to the best structures grown by molecular beam epitaxy, can be easily grown by low pressure metalorganic vapor phase epitaxy.Keywords
This publication has 15 references indexed in Scilit:
- Metalorganic chemical vapor deposition of III-V semiconductorsJournal of Applied Physics, 1985
- GaInAs/InP quantum wells grown by organometallic vapor phase epitaxyApplied Physics Letters, 1985
- GaAs/GaAs1−ySby strained-layer superlattices grown by molecular beam epitaxyApplied Physics Letters, 1985
- Photoluminescence of InxGa1-xAs-GaAs strained-layer superlatticesJournal of Electronic Materials, 1985
- Photoluminescence of strained-layer superlatticesSolid State Communications, 1984
- GaAsP-GaInAsSb superlattices: A new structure for electronic devicesJournal of Crystal Growth, 1984
- Stimulated emission in strained-layer quantum-well heterostructuresJournal of Applied Physics, 1983
- The depth dependence of the depth resolution in composition–depth profiling with Auger Electron SpectroscopySurface and Interface Analysis, 1983
- Structure of GaAs-Ga1−xAlxAs superlattices grown by metal-organic chemical vapour depositionElectronics Letters, 1983
- A GaAsxP1−x/GaP strained-layer superlatticeApplied Physics Letters, 1982