GaAs/GaAs1−ySby strained-layer superlattices grown by molecular beam epitaxy
- 15 October 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (8), 885-887
- https://doi.org/10.1063/1.95965
Abstract
GaAs/GaAs1−ySby superlattices have been grown by molecular beam epitaxy and characterized by x-ray diffraction, transmission electron microscopy, and low-temperature photoluminescence. Transmission electron microscopy and x-ray results indicate that high quality superlattices may be grown for lattice mismatches up to 3.1%. These structures exhibit luminescence at wavelengths as long as 1.7 μm, making them candidates for infrared device applications.Keywords
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