Effect of substrate temperature on the microstructure of thin-film silicide

Abstract

The effect of substrate temperature T_s during evaporation on the microstructure of Pd₂Si thin films on (111) Si formed by evaporation followed by subsequent higher‐temperature anneal has been investigated by transmission electron microscopy. For T_s of 20 and 100 °C, the Pd₂Si grows epitaxially on the substrate. For a T_s of 200 °C the Pd₂Si is polycrystalline and grains are uniaxially textured about the [001] axis and there are pinholes in the film. For a T_s of 300 °C, the microstructure of Pd₂Si is spongy and grains are much less oriented.