Growth and Annealing of Trapped Holes and Interface States Using Time-Dependent Biases
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 34 (6), 1172-1177
- https://doi.org/10.1109/tns.1987.4337448
Abstract
Defect growth and annealing mechanisms in MOS devices have been studied. Biases were changed during irradiations. Significant radiation-induced annealing of trapped holes was observed. Apparent room temperature annealing of interface states was also observed. A consistent explanation of this apparent annealing is presented, i.e., an effect of LNU's on the results of the subthreshold analysis technique. A possible physical mechanism for the creation of LNU's due to inhomogeneous energy deposition is explored.Keywords
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