Low-temperature homoepitaxial growth of Pt(111) in simulated vapor deposition

Abstract

Several atomic processes enhancing layer-by-layer growth have been identified in simulated deposition of Pt atoms onto Pt(111) at 275 K. After depositing the equivalent of one and two monolayers, only ca. 10% of the atoms sit atop the primary growing layer. Impinging atoms accelerate strongly towards the surface and can displace peripheral island atoms. Excess kinetic energy is generated that can effect annealing, even several atoms away from the impact site. Adatoms can descend at island edges only by an exchange diffusion mechanism, particularly at kink sites and vacancy islands.