Inviance of the Hall effect MOSFET to gate geometry
- 31 October 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (10), 1039-1043
- https://doi.org/10.1016/0038-1101(74)90143-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Magnetic sensitivity of a MAGFET of uniform channel current densitySolid-State Electronics, 1971
- A silicon MOS magnetic field transducer of high sensitivityIEEE Transactions on Electron Devices, 1969
- A Metal-Oxide-Semiconductor (MOS) Hall elementSolid-State Electronics, 1966
- Solution of the Field Problem of the Germanium GyratorJournal of Applied Physics, 1954