Effects of Spatial Dependence of Recombination Centers on the I-V Characteristics of p-n Junctions
- 1 September 1969
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (10), 4095-4103
- https://doi.org/10.1063/1.1657150
Abstract
Effects of spatial dependence of recombination centers on the I‐V characteristics of p‐n junctions are calculated. The results obtained show that these effects may explain the experimental deviations from the Shockley p‐n junction theory and from the theory of the carrier generation‐recombination in the space‐charge region. The most important result for applications is the junction in which the lifetime increases in the direction of the carrier diffusion; in this case for diffusion current, at reverse bias, a negative resistance appears.Keywords
This publication has 13 references indexed in Scilit:
- On the p-n junctions at variable signals†International Journal of Electronics, 1968
- Role of Gradual Capture in the Photoelectromagnetic and Photoconductive EffectsPhysica Status Solidi (b), 1968
- Temperature Dependence of the Photoconductive Lifetime in n-Type Gallium ArsenideJapanese Journal of Applied Physics, 1966
- Properties of Gallium Arsenide Diodes between 4.2° and 300°KJournal of Applied Physics, 1965
- Effect of Deep Levels on the Optical and Electrical Properties of Copper-Doped GaAsJunctionsPhysical Review B, 1965
- Properties of GaAs alloy diodesSolid-State Electronics, 1963
- Gallium-Arsenide Diffused DiodesJournal of the Electrochemical Society, 1960
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949