Two-Dimensional Electron Gas at GaAs/Ga0.52In0.48P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
- 1 February 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (2A), L127
- https://doi.org/10.1143/jjap.25.l127
Abstract
We report the first observation of two-dimensional electron gas at GaAs/Ga0.52In0.48P heterointerfaces using the Shub-nikov-de Haas measurements. The heterostructures were prepared by chloride vapor-phase epitaxy. The sheet carrier concentration is higher than that in GaAs/n-AlxGa1-xAs heterostructures with a similar donor-concentration inn-AlxGa1-xAs layers. This may be attributed to the facts that the dominant donors in the Ga0.52In0.48P layers are shallow and that the conduction-band discontinuity at the GaAs/Ga0.52In0.48P interfaces is large.Keywords
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