A New Highly-Conductive (AlGa)As/GaAs/(AlGa)As Selectively-Doped Double-Heterojunction Field-Effect Transistor (SD-DH-FET)
- 1 February 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (2A), L61-63
- https://doi.org/10.1143/jjap.23.l61
Abstract
A new type of field-effect transistor (SD-DH-FET) has been successfully fabricated in which very-high-density electrons (∼1.27×1012/cm2) are supplied from a selectively-doped (AlGa)As/GaAs/(AlGa)As double-heterojunction structure grown by molecular beam epitaxy. The structure showed an extremely high sheet conductivity of 24 mS/□ at 77 K with a Hall mobility of 119,000 cm2/Vs. A depletion-mode FET with this structure showed high channel mobility of more than 35,000 cm2/Vs at 77 K, suggesting that SD-DH-FETs have potential for applications to extremely high-speed microwave devices and integrated circuits.Keywords
This publication has 8 references indexed in Scilit:
- Improved Electron Mobility Higher than 106 cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBEJapanese Journal of Applied Physics, 1983
- Use of a superlattice to enhance the interface properties between two bulk heterolayersApplied Physics Letters, 1983
- Current Transport in Modulation-Doped AlxGa1-xAs/GaAs Heterojunction Structures at Moderate Field StrengthsJapanese Journal of Applied Physics, 1982
- Observation of intersubband scattering in a 2-dimensional electron systemSolid State Communications, 1982
- A New AlGaAs/GaAs Heterojunction FET with Insulated Gate Structure (MISSFET)Japanese Journal of Applied Physics, 1982
- Mobility Enhancement in Inverted AlxGa1-xAs/GaAs Modulation Doped Structures and Its Dependence on Donor-Electron SeparationJapanese Journal of Applied Physics, 1981
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980
- Electronic Properties of a Semiconductor Superlattice II. Low Temperature Mobility Perpendicular to the SuperlatticeJournal of the Physics Society Japan, 1980