Refractory metal silicon device technology
- 1 December 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (12), 1105-1112
- https://doi.org/10.1016/0038-1101(68)90002-6
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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- Si-SiO[sub 2] Fast Interface State MeasurementsJournal of the Electrochemical Society, 1968
- The Etching of Silicon Nitride in Phosphoric Acid with Silicon Dioxide as a MaskJournal of the Electrochemical Society, 1967
- A New Masking Technique for Semiconductor ProcessingJournal of the Electrochemical Society, 1967
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966
- Properties of Amorphous Silicon Nitride FilmsJournal of the Electrochemical Society, 1966
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- ReplyJournal of Applied Meteorology, 1964
- A Diffusion Mask for GermaniumJournal of the Electrochemical Society, 1961
- Surface Protection and Selective Masking during Diffusion in SiliconJournal of the Electrochemical Society, 1957