Magnetoresistance of-Type Si in the Hopping Region
- 15 February 1963
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 129 (4), 1508-1509
- https://doi.org/10.1103/physrev.129.1508
Abstract
The magnetoresistance in the hopping region of B-doped Si was found to be negative. This contrasts with the behavior in -type Ge, where a positive magnetoresistance is characteristic of the hopping conduction region. No anisotropy is observed in fields up to 17 kG in the -type Si. The resistance tends to saturate at about 15 kG. The change in dc resistance at that field is about 10% from the zero-field value.
Keywords
This publication has 3 references indexed in Scilit:
- Weak-Field Magnetoresistance of Impurity Conduction in-Type GermaniumPhysical Review B, 1962
- Low-Frequency Conductivity Due to Hopping Processes in SiliconPhysical Review B, 1961
- Galvanomagnetic Effects in-Ge in the Impurity Conduction RangePhysical Review B, 1961