Magnetoresistance ofp-Type Si in the Hopping Region

Abstract

The magnetoresistance in the hopping region of B-doped Si was found to be negative. This contrasts with the behavior in $n$-type Ge, where a positive magnetoresistance is characteristic of the hopping conduction region. No anisotropy is observed in fields up to 17 kG in the $p$-type Si. The resistance tends to saturate at about 15 kG. The change in dc resistance at that field is about 10% from the zero-field value.