Photoluminescence properties of Er3+-doped BaTiO3 thin films
- 4 July 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (1), 25-27
- https://doi.org/10.1063/1.113061
Abstract
Er3+‐doped BaTiO3 thin films were grown on Si (100) by metalorganic chemical vapor deposition. Strong characteristic Er3+ intra‐4f shell emission at 0.80 eV is observed at 16 and 295 K. The Er3+ luminescence intensity is linearly dependent on the pump power. Photoluminescence lifetimes were found to be on the order of 8 ms. These results indicate that Er‐doped BaTiO3 has potential as an optically active, nonlinear waveguide medium.Keywords
This publication has 15 references indexed in Scilit:
- Time Decay Study of the Er3+-Related Luminescence in In1-xGaxPMaterials Science Forum, 1993
- Photoluminescence characterization of Er-implanted Al2O3 filmsApplied Physics Letters, 1993
- Second-harmonic generation of poled BaTiO3 thin filmsApplied Physics Letters, 1993
- Structural, magnetic, and transport properties of RxBa1-xTiO3-.delta. solid solutions, where R = La, Nd, Gd, Er, and Y: rare-earth-dependent metal-to-semiconductor transitionsChemistry of Materials, 1992
- Rendering barium titanate semiconductive by doping with rareearth elementsFerroelectrics, 1988
- Photoluminescence decay of 1.54 μm Er3+ emission in Si and III-V semiconductorsElectronics Letters, 1988
- Note on unilateral power gain as applied to submicrometre transistorsElectronics Letters, 1988
- Nd:MgO:LiNbO_3 spectroscopy and laser devicesJournal of the Optical Society of America B, 1986
- Determination of the Low-Frequency Linear Electro-Optic Effect in Tetragonal BaTiO_3†Journal of the Optical Society of America, 1965
- Guided Waves in a Dielectric Slab, Hollow Wedge, and Hollow ConeJournal of the Optical Society of America, 1965