Electrical characteristics and lifetimes of microdischarge devices having thin dielectric films of aluminum oxide,boron nitride, or barium titanate

Abstract

The electrical (V-I) characteristics, radiative efficiencies, and lifetimes of Ni screen/dielectric/Ni microdischarge devices, having overall thicknesses as small as <100 µm and cylindrical microchannels 50–150 µm in diameter, are investigated for Al2O3, BN, and BaTiO3 dielectric films that are 120 or 200 µm, 30 µm, and 5 µm in thickness, respectively. Having dielectrics fabricated by sol–gel processes or colloidal deposition and operated with Ne gas pressures between 300 and 1200 Torr (300K), these devices operate at voltages as low as ∼93 V (100 µm dia. BaTiO3 device), and exhibit exceptional stability and lifetimes. After 100 h of continuous operation, a Ni screen/30 µm BN/Ni device operating in 700 Torr Ne (static gas fill) at 100 V produces ∼98% of its initial radiant output.