The electrical properties of sulfur-passivated and rapidly thermally annealed GaAs metal-oxide-semiconductor structures with the oxide layer grown anodically
- 28 August 1994
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 248 (2), 199-203
- https://doi.org/10.1016/0040-6090(94)90011-6
Abstract
No abstract availableKeywords
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