Interfacial properties of InP and phosphorus deposited at low temperature

Abstract

We are reporting on a large reduction in the density of states on the InP surface by a phosphorus overlayer. Phosphorus, which is deposited at low temperatures, is a high-resistivity amorphous semiconductor that provides chemical and physical continuity at the interface. The density of surface states, extracted from capacitance-voltage data on metal-insulator-capacitor diodes, is ∼1011/cm2 eV at 0.1 eV below the conduction-band minimum. The low density of states near the conduction band is interpreted as a reduction of phosphorus vacancies at the P-InP interface.