Chemical vapor deposition and characterization of phosphorus nitride (P3N5) gate insulators for InP metal-insulator-semiconductor devices
- 1 July 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (7), 5037-5043
- https://doi.org/10.1063/1.331380
Abstract
A new gate insulating film consisting of P3N5 was formed on an InP surface by a new chemical vapor deposition (CVD) technique. A suitable combination of reagents (PH3 and NH3) made P3N5 CVD feasible in an ambient free from oxygen and having excess phosphorus pressure. The new insulator revealed ohmic conduction with a resistivity as high as 104Ω cm. The breakdown field intensity increased up to 107V/cm at room temperature. The low frequency dielectric constant was 3.7 ε0. A very minor hysteresis was seen in the capacitance‐voltage curves measured on P3N5‐ InP metal‐insulator‐semiconductor diode. The interface state density was reduced to 1012/cm2eV at an energy near the conduction band edge. Photoluminescence spectra were measured before and after CVD to determine the surface passivation effect.Keywords
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