Large reflectivity modulation using InGaAs-GaAs
- 1 November 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (11), 807-809
- https://doi.org/10.1109/68.63228
Abstract
The first reflection modulator using electroabsorption in strained InGaAs-GaAs quantum wells is reported. With an insertion loss of 1.9 dB and a reflectivity change of 42% at room temperature, the modulator is comparable to the best devices reported in GaAs-Al-GaAs system. A framework is presented for examining the tradeoff between insertion loss and modulation ratio from a theoretical perspective and compare the predicted limits to reported devices.Keywords
This publication has 10 references indexed in Scilit:
- Transverse modulators with a record reflection change of >20%/V using asymmetric Fabry–Perot structuresApplied Physics Letters, 1990
- Extremely low-voltage Fabry-Perot reflection modulatorsIEEE Photonics Technology Letters, 1990
- Electroabsorptive Fabry-Perot reflection modulators with asymmetric mirrorsIEEE Photonics Technology Letters, 1989
- Well size related limitations on maximum electroabsorption in GaAs/AlGaAs multiple quantum well structuresApplied Physics Letters, 1989
- Low-voltage multiple quantum well reflection modulator with on:off ratio > 100:1Electronics Letters, 1989
- A Strained Superlattice Buffer Layer for InGaAs/GaAs Quantum WellsPublished by Optica Publishing Group ,1989
- Multiple Quantum-Well Asymmetric Fabry-Perot Etalons for High-Contrast, Low-Insertion-Loss Optical ModulationPublished by Optica Publishing Group ,1989
- Electrodispersive multiple quantum well modulatorApplied Physics Letters, 1988
- Electrically tunable Fabry–Perot mirror using multiple quantum well index modulationApplied Physics Letters, 1988
- Electroabsorption in an InGaAs/GaAs strained-layer multiple quantum well structureApplied Physics Letters, 1986