Transverse modulators with a record reflection change of >20%/V using asymmetric Fabry–Perot structures

Abstract

An asymmetric Fabry–Perot structure with a multiple quantum well active region is demonstrated to provide a reflection change of >45% for an operating voltage swing of only ∼2 V, with a contrast ratio of more than 15. Photocurrent measurements show that the same devices also work as voltage-tunable detectors. Such devices compete effectively with low-voltage waveguide modulators, with further advantages of easy coupling and compact sizes, i.e., small capacitances.