ZrN diffusion barrier in aluminum metallization schemes
- 1 June 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 104 (1-2), 81-87
- https://doi.org/10.1016/0040-6090(83)90550-3
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- TiN formed by evaporation as a diffusion barrier between Al and SiJournal of Vacuum Science and Technology, 1982
- Diffusion of copper in thin TiN filmsThin Solid Films, 1982
- Interfacial reactions between aluminum and transition-metal nitride and carbide filmsJournal of Applied Physics, 1982
- High-temperature contact structures for silicon semiconductor devicesApplied Physics Letters, 1980
- TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devicesApplied Physics Letters, 1980
- Diffusion barriers in thin filmsThin Solid Films, 1978
- The magnetic susceptibility and electrical resistivity of some transition metal silicidesPhilosophical Magazine, 1958