Thin SiO2 films formed by oxygen ion implantation in silicon: Electron microscope investigations of the Si-SiO2 interface structures and their c-v characteristics
- 1 September 1976
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 37 (2), 241-248
- https://doi.org/10.1016/0040-6090(76)90190-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Formation of thin SiO2 films by high dose oxygen ion implantation into silicon and their investigation by IR techniquesThin Solid Films, 1976
- MOS and vertical junction device characteristics of epitaxial silicon on low aluminum-rich spinelSolid-State Electronics, 1970
- Stabilization of MOS devicesSolid-State Electronics, 1967
- Thin-film silicon-on-sapphire deep depletion MOS transistorsIEEE Transactions on Electron Devices, 1966
- Formation of SiO2 Films by Oxygen-Ion BombardmentJapanese Journal of Applied Physics, 1966