A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs
- 1 April 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 8 (4), 360-369
- https://doi.org/10.1109/43.29590
Abstract
An efficient self-consistent device simulator coupling Poisson equation and Monte Carlo transport suitable for general silicon devices, including those with regions of high doping/carrier densities, is discussed. Key features include an original iteration scheme and an almost complete vectorization of the program. The simulator has been used to characterize nonequilibrium effects in deep submicron nMOSFETs. Substantial overshoot effects are noticeable at gate lengths of 0.25 μm at room temperaturesKeywords
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