Nonstationary carrier dynamics in quarter-micron Si MOSFETs
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 7 (2), 254-258
- https://doi.org/10.1109/43.3156
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in SiliconIEEE Electron Device Letters, 1985
- Extremely high transconductance (above 500 mS/mm) MOSFET with 2.5 nm gate oxidePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- Two-dimensional MOSFET simulation with energy transport phenomenaPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Accurate modeling for submicrometer-gate Si and GaAs MESFET's using two-dimensional particle simulationIEEE Transactions on Electron Devices, 1983
- 0.15 µm Channel-length MOSFET's fabricated using e-beam lithographyIEEE Electron Device Letters, 1982
- Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET'sIEEE Transactions on Electron Devices, 1982
- Electron drift velocity in siliconPhysical Review B, 1975
- Two-dimensional particle models in semiconductor-device analysisElectronics Letters, 1974