Epitaxial Growth of CdTe on InSb(100) by RF Sputtering
- 1 September 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (9A), L1437
- https://doi.org/10.1143/jjap.26.l1437
Abstract
Cadmium telluride is deposited epitaxially by rf sputtering on the clean surface of InSb(100) substrate from which the surface native oxide has been etched off in advance by H2 plasma treatment. The crystalline quality of CdTe films which depends on the substrate temperature is evaluated by means of the optical reflectance, Raman scattering and RHEED pattern measurements. CdTe films prepared at temperatures of 250-300°C are deposited epitaxially, but those at 100°C are not.Keywords
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