Properties of CdTe/InSb heterostructures prepared by molecular beam epitaxy
- 1 December 1982
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (12), 9232-9234
- https://doi.org/10.1063/1.330400
Abstract
Properties of CdTe/InSb heterostructures grown on (111)B InSb substrates by molecular beam epitaxy are reported. X‐ray diffraction and uv reflectance measurements were used to judge the quality of epitaxy for layers grown under various conditions. Auger depth profile analysis revealed a sharp CdTe/InSb interfacial region of less than 250 Å for depositions at 220 °C. Detailed capacitance‐voltage measurements yielded interface‐state densities of 1.4–2.8×1011 cm−2 eV−1 (near midgap) for these preliminary samples, indicating that improved metal‐insulator‐semiconductor structures on InSb may be possible using this lattice‐matched heterojunction surface passivation scheme.Keywords
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