Ultrashort laser: Lasing in MBE GaAs layer with perpendicular-to-film optical excitation and emission
- 1 December 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 16 (12), 1283-1285
- https://doi.org/10.1109/jqe.1980.1070413
Abstract
Lasing was observed in a 4.5 μm thick GaAs MBE-grown heterostructure (0.2 μm Al 0.42 Ga 0.58 As, 4.1 μm GaAs, 0.21 μm AlGaAs). The laser was driven by pulses from a mode-locked Ar laser (514.5 nm) with a maximum of 20 W peak power in 100 ps long pulses focused to 25 μm. The lasing occured along the pump axis within a cavity defined by the coated AlGaAs surfaces.Keywords
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