DEVIATIONS FROM PARABOLIC GROWTH IN THE THERMAL OXIDATION OF SILICON
- 1 February 1966
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 8 (3), 57-58
- https://doi.org/10.1063/1.1754481
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- The defect structure of grown silicon dioxide filmsIEEE Transactions on Electron Devices, 1965
- Étude de certaines propriétés de couches de SiO2 sur support de siliciumJournal de Physique, 1964
- Rates of Formation of Thermal Oxides of SiliconJournal of the Electrochemical Society, 1964
- Discussion of “The Oxidation of Silicon in Dry Oxygen, Wet Oxygen, and Steam” [B. E. Deal (pp. 527–533, Vol. 110, No. 6)]Journal of the Electrochemical Society, 1963
- The High Temperature Oxidation of SiliconThe Journal of Physical Chemistry, 1957
- Optical Measurement of Film Growth on Silicon and Germanium Surfaces in Room AirJournal of the Electrochemical Society, 1957
- The gas/oxide interface and the oxidation of metalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1956