Diagnostics of Hydrogen Role in the Si Surface Reaction Processes Employing In-situ Fourier Transform Infrared-Attenuated Total Reflection
- 1 November 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (11S)
- https://doi.org/10.1143/jjap.30.3215
Abstract
The oxidation process of H-terminated amorphous Si film on Ge and the reaction mechanism of the triethylsilane (TES)/H system which allows us to deposit an organic Si film conformably have been investigated employing in-situ FTIR(Fourier transform infra red)-ATR(attenuated total reflection). This measurement was demonstrated to be a sensitive and simple method to inspect the role of H(hydrogen) in their surface reactions. In the Si oxidation case, the H-terminated Si is readily oxidized by O(oxygen) atoms. The oxidation with O2 molecules proceeds gradually as the breaking of Si-H bonds and forming of H-Si-O bonds due to binding of O atoms with the back bond of Si for 700 min. After about 700 min, dissociated O atoms rapidly penetrate the Si film, and oxidize the bulk Si, leaving both Si-H and H-Si-O bonds still on the Si surface. Next, in the TES/H reaction system, gas phase FTIR spectra obtained by reactions of H atoms or H2 molecules with TES do not show appreciable change in a wide range of pressure. Nevertheless, in-situ FTIR-ATR reveals that TES reacts easily with H atoms on the surface, desorbing H2, methyl and ethyl groups.Keywords
This publication has 10 references indexed in Scilit:
- Digital Chemical Vapor Deposition of SiO2 Using a Repetitive Reaction of Triethylsilane/Hydrogen and OxidationJapanese Journal of Applied Physics, 1991
- Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition with In-situ XPS MeasurementJapanese Journal of Applied Physics, 1990
- Growth of native oxide on a silicon surfaceJournal of Applied Physics, 1990
- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990
- Effects of surface hydrogen on the air oxidation at room temperature of HF-treated Si (100) surfacesApplied Physics Letters, 1990
- Influence of surface fluorination on the oxidation of amorphous silicon by atomic oxygen at 300 KApplied Surface Science, 1989
- The formation of hydrogen passivated silicon single-crystal surfaces using ultraviolet cleaning and HF etchingJournal of Applied Physics, 1988
- High-rate growth at low temperatures by free-jet molecular flow: Surface-reaction film-formation technologyApplied Physics Letters, 1988
- Investigations on hydrophilic and hydrophobic silicon (100) wafer surfaces by X-ray photoelectron and high-resolution electron energy loss-spectroscopyApplied Physics A, 1986
- Chemical effects on the frequencies of Si-H vibrations in amorphous solidsSolid State Communications, 1979