Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
- 1 August 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (8A), L602-604
- https://doi.org/10.1143/jjap.24.l602
Abstract
Si atomic-planar-doping in GaAs was studied with the use of molecular beam epitaxy. It was found that doped Si impurities are entirely activated with a sheet doping concentration of up to about 3×1012 cm-2. A heavy doping experiment in GaAs was conducted by repeating Si planar doping. The average electron concentration of the n+-GaAs layer was as high as 1.14×1019 cm-3 which is comparable to the highest value ever reported for Si-doped GaAs.Keywords
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