Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy
- 1 November 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (11), 6751-6753
- https://doi.org/10.1063/1.331867
Abstract
Heavy Si doping of GaAs and AlGaAs grown by molecular beam epitaxy has been studied. By using a slow growth rate of 1000 Å/h, the electron concentration obtained for GaAs was 1.1×1019 cm−3, which is higher than the previously reported limit of 5×1018 cm−3. The accumulation of excess Si near the surfaces of GaAs and AlGaAs has been identified by secondary ion mass spectroscopy. A Si-induced 3×2 surface structure has been observed, and the influence of arsenic to gallium flux ratio on the surface morphology is discussed. Photoluminescence spectra of the doped layers are presented.Keywords
This publication has 6 references indexed in Scilit:
- Si incorporation in AlxGa1−xAs grown by molecular beam epitaxyJournal of Vacuum Science and Technology, 1982
- Nucleation effects during MBE growth of Sn-Doped GaAsApplied Physics A, 1982
- The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAsApplied Physics Letters, 1981
- I n s i t u Ohmic-contact formation to n- and p-GaAs by molecular beam epitaxyApplied Physics Letters, 1978
- Nonalloyed Ohmic contacts to n-GaAs by molecular beam epitaxyApplied Physics Letters, 1978
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978