The effects of impurity diffusion and surface damage on oxygen precipitation in silicon
- 1 January 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (1), 388-391
- https://doi.org/10.1063/1.331714
Abstract
The rate of oxygen precipitation in Czochralski-grown silicon with oxygen supersaturation ratios s>5 and s<5 at 1000 °C was studied as a function of surface processing. Reference samples were compared with samples diffused with high-concentration phosphorus or arsenic layers in N2 or O2 ambients. Oxygen precipitation was also studied in samples with air-abraded surfaces. It was found that for s5 the concentration of oxygen in SiO2 precipitates in P diffused wafers did not equal the change in interstitial oxygen, and a high density of stacking faults were seen in the bulk. It is concluded that the point defects generated from damaged surfaces and P-diffused surfaces are not the same as those generated from an undoped surface during oxidation. A model describing the effect of surface-generated vacancies and silicon self-interstitials on oxygen precipitate nucleation and growth is discussed.Keywords
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