Electrical properties of silicon implanted with boron ions of MeV energy
- 1 January 1973
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 19 (2), 77-82
- https://doi.org/10.1080/00337577308232222
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- The implanted profiles of boron, phosphorus and arsenic in silicon from junction depth measurementsSolid-State Electronics, 1970
- Electrical Behavior of Group III and V Implanted Dopants in SiliconJournal of Applied Physics, 1969
- Integrated E and dE/dχ semiconductor particle detectors made by ion implantationNuclear Instruments and Methods, 1969
- Characteristics of ion-implanted contacts for nuclear particle detectors: II. Concentration distribution in ion-implanted contacts for semiconductor detectorsNuclear Instruments and Methods, 1969
- A universal ion source for tandem acceleratorsNuclear Instruments and Methods, 1968
- Impurity distribution profiles in ion-implanted siliconCanadian Journal of Physics, 1968
- Semiconductor Doping by High Energy 1–2.5 Mev Ion ImplantationJournal of the Electrochemical Society, 1968
- ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTSCanadian Journal of Physics, 1967
- The fabrication of high quality silicon junction detectors by low energy ion implantationThe European Physical Journal A, 1967
- DEEP (1–10 μ) PENETRATION OF ION-IMPLANTED DONORS IN SILICONApplied Physics Letters, 1966