Deep levels introduced by electron irradiation of InP
- 10 October 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (28), L1007-L1012
- https://doi.org/10.1088/0022-3719/15/28/002
Abstract
Several InP samples have been irradiated with 2 MeV electrons. Six electron traps and two hole traps were detected by means of deep level transient spectroscopy (DLTS) and optical DLTS. One of these levels appears to have an unusually large lattice relaxation, having a small electron capture cross section, thermally activated with an energy of 0.33 eV. This is comparable to the thermal emission activation energy of 0.44 eV.Keywords
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