Raman-active modes of alpha silicon nitride
- 1 July 1978
- journal article
- research article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 69 (1), 40-42
- https://doi.org/10.1063/1.436368
Abstract
Raman spectra of powder and single crystals of alpha silicon nitride have been measured at room temperature. More than twenty Raman lines were observed for annealed white powder samples and dominant lines were at 259, 365, 515, 668, 868, 915, 976, and 1034 cm−1. The former three lines were observed also for the single crystals in spite of strong fluorescence. These small wavenumber phonons could tentatively be assigned to collective vibration modes based on a reduction scheme for the irreducible representation of the space group of the crystal.Keywords
This publication has 5 references indexed in Scilit:
- Structural Approach to the Problem of Oxygen Content in Alpha Silicon NitrideJournal of the American Ceramic Society, 1975
- Effect of Oxygen Partial Pressure on the Growth Character of α-Si3N4Journal of the Ceramic Association, Japan, 1975
- On the Compounds in Li2O-B2O3-H2O SystemJournal of the Ceramic Association, Japan, 1975
- Preparation of silicon nitride single crystals by chemical vapor depositionJournal of Crystal Growth, 1974
- Structure du nitrure de silicium αActa Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1969