GaN-AlxGa1−xN Heterostructures Deposition by Low Pressure Metalorganic Chemical Vapor Deposition for Metal Insulator Semiconductor Field Effect Transistor (Misfet) Devices
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-AlxGa1−xN heterojunctionsApplied Physics Letters, 1992
- Optical characterization of AlGaN-GaN-AlGaN quantum wellsJournal of Electronic Materials, 1992
- Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor depositionApplied Physics Letters, 1992
- High electron mobility GaN/AlxGa1−xN heterostructures grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer LayerJapanese Journal of Applied Physics, 1990
- Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxyJournal of Applied Physics, 1982
- Graded channel FET's: Improved linearity and noise figureIEEE Transactions on Electron Devices, 1978
- Electrical properties of n-type vapor-grown gallium nitrideJournal of Physics and Chemistry of Solids, 1973