The thermal-expansion parameters of some GaxIn1−xAsyP1−x alloys
- 1 January 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (1), 100-102
- https://doi.org/10.1063/1.90575
Abstract
The coefficient of thermal expansion has been determined in the temperature range 25–400 °C for InP, the ternary alloy Ga0.47In0.53As, and the quaternary alloy Ga0.26In0.74As0.40P0.60 grown on (100) InP by liquid‐phase epitaxy. This parameter is (4.56±0.10) ×10−6/°C for InP, (5.42±0.10) ×10−6/°C for Ga0.26In0.74As0.60P0.40, and (5.66±0.10) ×10−6/°C for Ga0.47In0.53As.Keywords
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