The Ga0.47In0.53As homojunction photodiode—A new avalanche photodetector in the near infrared between 1.0 and 1.6 μm
- 1 October 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (7), 640-642
- https://doi.org/10.1063/1.90447
Abstract
A new p‐n photodetector operating at room temperature and sensitive in the near infrared for wavelengths as long as 1.6 μm has been made from Ga0.47In0.53As grown lattice matched on InP substrates by LPE. These detectors display avalanche gain and dark current as low as 2×10−9 A. Measurements of the speed of response at 1.06 μm have shown a detector response time as fast as 250 psec.Keywords
This publication has 16 references indexed in Scilit:
- The band structure dependence of impact ionization by hot carriers in semiconductors: GaAsSolid-State Electronics, 1978
- Growth and characterization of lattice-matched epitaxial films of GaxIn1−xAs/InP by liquid-phase epitaxyJournal of Electronic Materials, 1978
- V-6 1.7 µm heterojunction lasers and photodiodes of In.53Ga.47As/InPIEEE Transactions on Electron Devices, 1977
- Double epitaxial silicon avalanche photodiodes for optical-fibre communicationsElectronics Letters, 1977
- Liquid phase epitaxial growth of InGaAs on InPJournal of Crystal Growth, 1976
- In situ in etching technique for l.p.e. InPElectronics Letters, 1976
- Bounds on aperiodic cross-correlation for binary sequencesElectronics Letters, 1976
- Planar germanium photodiodesApplied Optics, 1975
- Electroabsorption avalanche photodiodesApplied Physics Letters, 1974
- Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μmApplied Physics Letters, 1974