Tungsten as a marker in thin-film diffusion studies
- 1 August 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (3), 159-161
- https://doi.org/10.1063/1.89007
Abstract
Vacuum‐deposited tungsten of about 30‐Å thickness has been used as a diffusion marker in the reaction between a thin Co film and Si. In order to produce a discontinuous W film, it is necessary first to deposit a Sn film with island structure and then W, after which the Sn is dissolved. It was found by MeV He+ backscattering analysis that the W is located at the Co‐Co2Si interface, which means that Co is the dominant diffuser in Co2Si.Keywords
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