Quasi-two-dimensional excitons in a strongly localized regime in CdTe-ZnTe superlattices

Abstract
Transient luminescence spectroscopy reveals that recombining excitons in a new, highly strained II-VI compound semiconductor superlattice CdTe-ZnTe are strongly localized at low lattice temperatures. We argue that such behavior is expected in a superlattice system with small valenceband offset under large lattice-mismatch strain when the influence of monolayer thickness variations (finite interface roughness) is considered.