Photoluminescence studies of ZnTe-CdTe strained-layer superlattices
- 19 May 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (20), 1383-1385
- https://doi.org/10.1063/1.96916
Abstract
Photoluminescence from ZnTe-CdTe strained-layer superlattices has been observed for the first time. Superlattices with CdTe and ZnTe layer thicknesses between 20 and 51 Å have been compared with CdxZn1−xTe alloys. The superlattices display intense visible photoluminescence which is observed at lower energies than for corresponding alloys. Both the intensities and energies of the luminescence indicate good superlattice structure. Second order k⋅p calculations have been performed and are found to be in agreement with experiment. Substrates greatly lattice mismatched to the superlattice are shown not to play a role in determining the band gap as the lattice constant jumps to that of the free-standing superlattice.Keywords
This publication has 15 references indexed in Scilit:
- Optoelectronic properties of Cd1−xZnxTe films grown by molecular beam epitaxy on GaAs substratesApplied Physics Letters, 1985
- New approach to the k⋅ p theory of semiconductor superlatticesJournal of Vacuum Science & Technology B, 1984
- strained-layer superlattices: A proposal for useful, new electronic materialsPhysical Review B, 1983
- Theoretical investigations of superlattice band structure in the envelope-function approximationPhysical Review B, 1982
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971
- Calculation of Energy-Band Pressure Coefficients from the Dielectric Theory of the Chemical BondPhysical Review Letters, 1971
- Electroelastic Properties of the Sulfides, Selenides, and Tellurides of Zinc and CadmiumPhysical Review B, 1963