Thermionic emission cooling in single barrier heterostructures
- 4 January 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (1), 88-89
- https://doi.org/10.1063/1.122960
Abstract
Nonisothermal transport in InGaAsP-based heterostructure integrated thermionic coolers is investigated experimentally. Cooling on the order of a degree over 1 μm thick barriers has been observed. This method can be used to enhance thermoelectric properties of semiconductors beyond what can be achieved with the conventional Peltier effect.Keywords
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